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 Semiconductor
STS8550
PNP Silicon Transistor
Descriptions
* High current application * Radio in class B push-pull operation
Feature
* Complementary pair with STS8050
Ordering Information
Type NO. STS8550 Marking STS8550 Package Code TO-92
Outline Dimensions
3.450.1 4.50.1 2.250.1
unit : mm
4.50.1
0.40.02
2.060.1
14.00.40
1.27 Typ. 2.54 Typ.
123
1.200.1
0.38
PIN Connections 1. Emitter 2. Base 3. Collector
KST-9013-000
1
STS8550
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Emitter current Collector dissipation Junction temperature Storage temperature
(Ta=25C)
Symbol
VCBO VCEO VEBO IC IE PC Tj Tstg
Ratings
-30 -25 -6 -800 800 625 150 -55~150
Unit
V V V mA mA mW C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter voltage Transition frequency Collector output capacitance
(Ta=25C)
Symbol
BVCBO BVCEO ICBO h
* FE
Test Condition
IC=-500A, IE=0 IC=-1mA, IB=0 VCB=-15V, IE=0 VCE=-1V, IC=-50mA IC=-500mA, IB=-50mA VCE=-1V, IC=-500mA VCE=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-30 -25 85 120 19 -50 300 -0.5 -1.2 -
Unit
V V nA V V MHz pF
VCE(sat) VBE fT Cob
* : hFE Rank
/ B : 85~160, C : 120~200, D : 160~300
KST-9013-000
2
STS8550
Electrical Characteristic Curves
Fig. 1 Pc - Ta Fig. 2 IC - VBE
Fig. 3 IC - VCE
Fig. 4 VCE(SAT) - IC
Fig. 5 hFE - IC
Fig. 6 hFE - IC
KST-9013-000
3


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